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| e g n-channel c = !" " ## $%& '( % )# !* +##,- ! + .- / " 0%"/ ! 1## / 2 3 " "" 4 2 3## " "" 5 " "" 6 $ %(78 "" 6 2 3## 9 ": " "" ; <%%9 ": " "" 6 / 0%"/ ! =# / 5 2 3 ; <%%5 :" ( ## 5 2 3## ; < %%5 :" ( > ?(" ! @# " !%(" " ! "!%(" " "# 4##+##14+1%%- " % - ; ! "a 1 4 ";4 ": # & b+cb%- ! " # $% & '( ) ( " * * '( (& + ! www.irf.com 1 , - ./ '( 0 12 # 34511 2 ( & + 2 # ! " (3 ( & ( ( (& / 55162 to-220ab 7" 8 0916 2 www.irf.com d * "!+" - # , 3$ d! 0%" * "!+" - ) / 3>##/ 9!) d " * "!+" - ) , / 3/ " ? '% ># 3 % 3$ / 3>)#/ " ? '% 6 ># / 3/ 34 ? 9 % )# 4# 0"!' e e 0 " ? :*! 8 #4) "7" " 7"' 0 " ? :*! 8 #1 % 9 !6 # ) 0 :*! 8 #> #6 " ? '% ># 3# 9!6 # ) % 3$ / 3>)#/ " ? '% # / 3/ 34 ? 9 % )# 0"!' e e 0 :*! 8 #)6 % "7" " 7"' 8 " 0%" , f ; "%% " %( ! ( ( ## / 3#/ ?( ( ,4 (9 / 3 4#/ 9!, 7" " " ( > g3 #;f. 7" 7"'% > 1# 3 9! )# # 3 > 3$ 5 7" 7"' "" 4 1# $ 3 9! 1 # 3 / 3##/ d 7" 7"' * "! )# )# 3 9! # 1## 3 1 ##$h 5 9 7"' )# $h 3 9! 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"#$ www.irf.com 3 :, ;(< ( = !" #" 0.1 1 10 100 0.1 1 10 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 0.1 1 10 100 56789101112 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) a v = 10v 5s pulse width cc , ; ( :6 = 0 4 8 12 16 0.1 1 10 100 f, frequency (khz) a 60% of rated voltage i duty cycle: 50% t = 125 c t = 90c gate drive as specified turn-on losses include effects of reverse recovery sink j power dissipation = 21w 4 www.irf.com $%& ' % ()%% % ()%%*+ $## "%%' 0 5 10 15 20 25 25 50 75 100 125 150 maximum dc collector current (a t , case temperature (c) c v = 15v ge a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a t , junction temperature (c) j i = 24a i = 12a i = 6.0a c c c www.irf.com 5 $%& *"& * $%& ,-"& * . ,-"& ' % 0 400 800 1200 1600 2000 1 10 100 ce c, capacitance (pf) v , collector-to-emitter voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 1020304050 ge v , gate-to-emitter voltage (v) g q , total gate charge (nc) a v = 400v i = 12a ce c ,-"& /%'0 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 a t , junction temperature (c) j r = 23 ? v = 15v v = 480v i = 24a i = 12a i = 6.0a g ge cc c c c ,-"& /%'0 0.50 0.52 0.54 0.56 0.58 0.60 0 102030405060 g a r , gate resistance ( ? ) v = 480v v = 15v t = 25c i = 12a cc ge j c 6 www.irf.com ,-"& $% !##,! ()%% -&1 - 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 0.1 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j 0.0 0.4 0.8 1.2 1.6 2.0 0102030 c i , collector-to-emitter current (a) a r = 23 ? t = 150c v = 480v v = 15v g j cc ge ,-"& /%'0 www.irf.com 7 . . 2 . 2 ,"& 2 2 2 0 200 400 600 100 1000 f di /dt - (a/s) rr q - (nc) i = 6.0a i = 12a i = 24a v = 200v t = 125c t = 25c r j j f f f 10 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 12a i = 24a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 0 40 80 120 160 100 1000 f di /dt - (a/s) t - (ns) rr i = 24a i = 12a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 6.0a i = 12a i = 24a f f f v = 200v t = 125c t = 25c r j j 8 www.irf.com t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = > ; ( $903" 3 3 vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same type device as d.u.t. d.u.t. 430f 80% of vce ; ( %( 3 3 3 3? 3 3 3 3 3 > ; ( $903 " 3 3 > ; ( $903 " 3 3? 3 www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. figure 20. figure 18e. 0 - vcc r l icm vcc = 480f pulsed collector current test circuit 10 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction tem- perature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 23 ? (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2010 !" #$%" & $'"%$% " ()% $% '$$'"" &$% ("** + $%! %,'$% note: "p" in assembly line position indicates "lead-free" |
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